A 200ns 256k HMOSII EPROM

Using a double poly HMOSII wafer stepper technology, a 4.29mm × 4.29mm 32K×8 EPROM with a 36μ m2cell size has been designed with typical chip access time and power dissipation of 200ns and 350mW, respectively, and a 12V programming mode.

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[2]  A. Folmsbee,et al.  A 128K EPROM with redundancy , 1982, 1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.