论文信息 - Forward block characteristic of a novel anti-ESD RF SOI LIGBT with a buried P-type layer - 字舞流文

Forward block characteristic of a novel anti-ESD RF SOI LIGBT with a buried P-type layer

M. Lin | R. Qi | H. P. Zhang | W. L. Zhao | H. Zhang | G. H. Liu | D. J. Wang | X. Niu | L. Y. Xu