Application reliability validation of GaN power devices

Standard qualification methodology or “qual” does not specify product-level testing due to the diverse range of products and use conditions, a limited ability for system-level acceleration, and complication from system-level failures. This is a concern for emerging power-management technologies, since the fundamental switching transitions are not covered. We show that hard-switching with the well-known double-pulse tester is predictive of device performance under system-level testing. It simplifies the problem of product reliability testing to one of a device and a tester. It enables us to detect devices that pass qual but perform poorly in application. As a result, our devices pass qual and perform well in application.

[1]  Benjamin K. Rhea,et al.  Two year reliability validation of GaN power semiconductors in low voltage power electronics applications , 2015, 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

[2]  S. Delage,et al.  Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

[3]  S. Dieckerhoff,et al.  A new Method for Dynamic Ron Extraction of GaN Power HEMTs , 2015 .

[4]  Kenichiro Tanaka,et al.  Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain , 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

[5]  Y. Wu,et al.  Advances in reliability and operation space of high-voltage GaN power devices on Si substrates , 2014, 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications.

[6]  J. Wurfl,et al.  Experimental analysis and modeling of GaN normally-off HFETs with trapping effects , 2015, 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe).

[7]  Sandeep R. Bahl,et al.  Product-level reliability of GaN devices , 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

[8]  Volodymyr Bondarenko,et al.  Ultra-Low Loss 600V - 1200V GaN Power Transistors for High Efficiency Applications , 2014 .

[9]  S. Krishnan,et al.  Current collapse in GaN heterojunction field effect transistors for high-voltage switching applications , 2014, 2014 IEEE International Reliability Physics Symposium.

[10]  Krishna Shenai,et al.  Rugged Electrical Power Switching in Semiconductors: A Systems Approach , 2014, Proceedings of the IEEE.