Ultra-thin silicon nitride films on Si by jet vapor deposition

Ultra-thin silicon nitride films (with equivalent oxide thicknesses /spl les/4 nm) have been successfully deposited directly on silicon substrates at room temperature using jet vapor deposition technique. These ultra-thin silicon nitride films exhibit excellent C-V and I-V characteristics, high electrical breakdown strength, low leakage current, and low densities of bulk and interface traps. These properties make JVD silicon nitride a very attractive candidate to extend the scaling limit of the gate dielectric below 4 nm of equivalent oxide thickness.