论文信息 - Midinfrared emission from near-infrared quantum-dot lasers

Midinfrared emission from near-infrared quantum-dot lasers

We report the electrically pumped emission of midinfrared (MIR) radiation from bipolar quantum-dot lasers during near-infrared lasing. The MIR spectrum exhibits a peak at 16 μm and is dominantly TM polarized. The MIR intensity exhibits a superlinear dependence on the injection; a maximum MIR power of 0.1 μW per facet was realized. Such a device is also modeled theoretically, and conditions for MIR lasing are predicted.

[1] Jamie D. Phillips,et al. Self-assembled InAs-GaAs quantum-dot intersubband detectors , 1999 .

[2] N. N. Ledentsov,et al. Spontaneous far-IR emission accompanying transitions of charge carriers between levels of quantum dots , 1998 .

[3] Dieter Bimberg,et al. Gain and Threshold of Quantum Dot Lasers: Theory and Comparison to Experiments , 1997 .

[4] B. F. Levine,et al. Quantum‐well infrared photodetectors , 1993 .

[5] D. Bimberg,et al. Electronic and optical properties of strained quantum dots modeled by 8-band k⋅p theory , 1999 .

[6] Jean-Michel Gérard,et al. Midinfrared second-harmonic generation in p-type InAs/GaAs self-assembled quantum dots , 1999 .

[7] J. Singh,et al. Possibility of room temperature intra-band lasing in quantum dot structures placed in high-photon density cavities , 1996, IEEE Photonics Technology Letters.

[8] D. Bimberg,et al. Quantum-dot cw heterojunction injection laser operating at room temperature with an output power of 1 W , 1997 .

[9] Dieter Bimberg,et al. Carrier Dynamics in Quantum Dots: Modeling with Master Equations for the Transitions between Micro-States , 1997 .

[10] Nikolai N. Ledentsov,et al. Quantum dot heterostructures , 1999 .

[11] Emmanuel Rosencher,et al. Intersubband transitions in quantum wells , 1992 .