论文信息 - In Situ Observation of Compliance-Current Overshoot and Its Effect on Resistive Switching

In Situ Observation of Compliance-Current Overshoot and Its Effect on Resistive Switching

The compliance-current dependence of the resistive-switching behaviors is investigated in TaN/CuxO/Cu memory devices with 1R architecture and 1T1R architecture, respectively. The correlation of reset current I reset and on-state resistance R on can be verified by adjusting the compliance current I comp. Meanwhile, I reset and R on become independent on I comp in the 1R architecture when I comp is below 1 mA. A serious compliance-current overshoot phenomenon is in situ observed in 1R-architecture device, and it remarkably affects the resistive-switching characteristics because the compliance current dominates the memory behaviors. Therefore, resistive-switching investigation based on 1T1R architecture is much more reliable.

[1] M. Aoki,et al. Reduction of Reset Current in NiO-ReRAM Brought about by Ideal Current Limiter , 2007, 2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop.

[2] S. O. Park,et al. Electrical observations of filamentary conductions for the resistive memory switching in NiO films , 2006 .

[3] Jong-Wan Park,et al. Reproducible resistive switching in nonstoichiometric nickel oxide films grown by rf reactive sputtering for resistive random access memory applications , 2005 .

[4] Byung Joon Choi,et al. Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films , 2007 .

[5] R. Waser,et al. Nanoionics-based resistive switching memories. , 2007, Nature materials.

[6] Masashi Kawasaki,et al. Resistance switching memory device with a nanoscale confined current path , 2007 .

[7] Byung Joon Choi,et al. Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition , 2005 .

[8] Byung Joon Choi,et al. Identification of a determining parameter for resistive switching of TiO2 thin films , 2005 .