Possibility of Transport Through a Single Acceptor in a Gate-All-Around Silicon Nanowire PMOSFET
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Donggun Park | Sung Woo Hwang | Keun Hwi Cho | Dong-Won Kim | Young Chai Jung | Byoung Hak Hong | Kyung Seok Oh | Won-Seong Lee | Jae Sung Rieh | K.H. Yeo | S.D. Suk | Y.Y. Yeoh | M. Li
[1] Hong Shick Min,et al. Three-dimensional simulation of discrete oxide charge effects in 0.1 μm MOSFETs , 2001 .
[2] H. R. Chandrasekhar,et al. Resonant interaction of acceptor states with optical phonons in silicon , 1976 .
[3] A. Fujiwara,et al. Identification of single and coupled acceptors in silicon nano-field-effect transistors , 2007 .
[4] R. G. Wheeler,et al. Observation of the linear stark effect in a single acceptor in Si. , 2007, Physical review letters.
[5] H. Wong,et al. Three-dimensional "atomistic" simulation of discrete random dopant distribution effects in sub-0.1 /spl mu/m MOSFET's , 1993, Proceedings of IEEE International Electron Devices Meeting.
[6] Yasuo Takahashi,et al. Conductance modulation by individual acceptors in Si nanoscale field-effect transistors , 2007 .
[7] B. Ryu,et al. High performance 5nm radius Twin Silicon Nanowire MOSFET (TSNWFET) : fabrication on bulk si wafer, characteristics, and reliability , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
[8] B. Ryu,et al. Observation of Single Electron Tunneling and Ballistic Transport in Twin Silicon Nanowire MOSFETs (TSNWFETs) Fabricated by Top-Down CMOS Process , 2006, 2006 International Electron Devices Meeting.
[9] Donggun Park,et al. Temperature-Dependent Characteristics of Cylindrical Gate-All-Around Twin Silicon Nanowire MOSFETs (TSNWFETs) , 2007, IEEE Electron Device Letters.
[10] Yiying Wu,et al. Room-Temperature Ultraviolet Nanowire Nanolasers , 2001, Science.
[11] M Jurczak,et al. Transport spectroscopy of a single dopant in a gated silicon nanowire. , 2006, Physical review letters.
[12] Chenming Hu,et al. 5nm-gate nanowire FinFET , 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..
[13] Observation of three-dimensional shell filling in cylindrical silicon nanowire single electron transistors , 2007 .
[14] R. G. Wheeler,et al. Effect of local strain on single acceptors in Si , 2007 .
[15] Insoo Woo,et al. Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET , 2008 .