Physics of base charge dynamics in the three port transistor laser

The base charge dynamics of the quantum-well (QW) transistor laser (TL) is analyzed by constructing a model based on earlier incomplete charge control analysis. We extend Kirchhoff’s Law to include electrical and consistently “optical” elements. The model yields, via microwave measurements (and resolvable picosecond responses), physical quantities associated with TL base-charging, permitting the extraction of a base QW charge density, nQW=2×1016 cm−3, consistent with calculation by current continuity. The low density implies quasi-Fermi level discontinuity in the TL base, and indicates that the base QW charge level is not as important as the current driving the QW and supplying electron-hole recombination.

[1]  A. James,et al.  Franz–Keldysh Photon-Assisted Voltage-Operated Switching of a Transistor Laser , 2007, IEEE Photonics Technology Letters.

[2]  Milton Feng,et al.  Photon-assisted breakdown, negative resistance, and switching in a quantum-well transistor laser , 2007 .

[3]  Yuan Taur,et al.  Fundamentals of Modern VLSI Devices , 1998 .

[4]  Dieter K. Schroder,et al.  Semiconductor Material and Device Characterization: Schroder/Semiconductor Material and Device Characterization, Third Edition , 2005 .

[5]  Milton Feng,et al.  Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors , 2004 .

[6]  Milton Feng,et al.  Laser operation of a heterojunction bipolar light-emitting transistor , 2004 .

[7]  Milton Feng,et al.  Electrical-optical signal mixing and multiplication (2-->22 GHz) with a tunnel junction transistor laser , 2009 .

[8]  J. Bardeen,et al.  The transistor, a semi-conductor triode , 1948 .

[9]  Milton Feng,et al.  Scaling of light emitting transistor for multigigahertz optical bandwidth , 2009 .

[10]  Scott A. Wartenberg RF measurements of die and packages , 2002 .

[11]  N. Holonyak,et al.  Microwave operation and modulation of a transistor laser , 2005 .

[12]  Milton Feng,et al.  Signal mixing in a multiple input transistor laser near threshold , 2006 .

[13]  D. Schroder Semiconductor Material and Device Characterization , 1990 .

[14]  Milton Feng,et al.  Tilted-charge high speed (7 GHz) light emitting diode , 2009 .

[15]  Milton Feng,et al.  Room temperature continuous wave operation of a heterojunction bipolar transistor laser , 2005 .

[16]  Milton Feng,et al.  Quantum-well-base heterojunction bipolar light-emitting transistor , 2004 .

[17]  Milton Feng,et al.  Charge control analysis of transistor laser operation , 2007 .

[18]  H. Then,et al.  4.3 GHz optical bandwidth light emitting transistor , 2009 .

[19]  Milton Feng,et al.  Tunnel junction transistor laser , 2009 .

[20]  Milton Feng,et al.  Resonance-free frequency response of a semiconductor laser , 2009 .

[21]  Milton Feng,et al.  Carrier lifetime and modulation bandwidth of a quantum well AlGaAs∕InGaP∕GaAs∕InGaAs transistor laser , 2006 .

[22]  S. S. Perlman,et al.  p-n heterojunctions , 1964 .