R3, an Accurate JFET and 3-Terminal Diffused Resistor Model

This paper presents an improved compact model for diffused resistors and JFETs, valid over geometry, bias, and temperature. The model includes a physically based junction depletion model, a new and accurate velocity saturation model derived from data, and self-heating, which is important for low sheet resistance devices.

[1]  C. C. McAndrew.  Predictive technology characterization, missing links between TCAD and compact modeling , 2000, 2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502).

[2]  C. C. McAndrew,et al.  Physically-based effective width modeling of MOSFETs and diffused resistors , 2000, ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095).

[3]  Chenming Hu,et al.  Temperature and current effects on small-geometry-contact resistance , 1997, International Electron Devices Meeting. IEDM Technical Digest.

[4]  C. C. McAndrew.  Useful numerical techniques for compact modeling , 2002, Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002..

[5]  R. E. Thomas,et al.  Carrier mobilities in silicon empirically related to doping and field , 1967 .

[6]  C. C. McAndrew,et al.  A 3-terminal model for diffused and ion-implanted resistors , 1997 .

[7]  F. N. Trofimenkoff.  Field-dependent mobility analysis of the field-effect transistor , 1965 .