Three‐dimensional light guides in single‐crystal GaAs–Alx Ga1 − xAs

A technique is described for fabricating miniature dielectric waveguides of GaAs embedded in a matrix of AlxGa1−xAs. The method appears to have general applicability for generating complex integrated optical circuits using the AlxGa1−xAs system. The film growth employs molecular beam epitaxy (MBE), while the pattern generation is based on photolithography combined with a recently developed anodization technique.