The preparation of device quality gallium phosphide by metal organic chemical vapor deposition

Abstract Device quality epitaxial layers of gallium phosphide were grown on gallium phosphide substrates by the decomposition of trimethylgallium (TMG) and phosphine in a hydrogen atmosphere. The lowest background carrier concentration (≈5 × 10115cm-3) and best surface morphology were obtained at a growth temperature of 800δC and a PH3/TMG ratio ≈10 for a growth rate of 0.17 μm/min. The layers can be controllably doped n- or p-type by the use of hydrogen selenide or diethylzinc. Both n-and p-type material with mobilities of ≈120 cm2/V · s and carrier concentrations of ≈1016 cm-3 can be prepared. Rectifying diodes with reverse leakage currents of