论文信息 - Analysis of thermal stress‐induced grain boundary cavitation and notching in narrow Al‐Si metallizations

Analysis of thermal stress‐induced grain boundary cavitation and notching in narrow Al‐Si metallizations

Grain boundary voiding and notching have been found to produce failures in narrow metallizations during thermal aging. The nucleation and growth of grain boundary voids are considered to occur as a result of grain boundary sliding and the subsequent stress‐induced mass transport. A proposed model yields the linewidth and temperature dependence of the observed failure rate.

[1] A. Argon,et al. Diffusive growth of grain-boundary cavities , 1981 .

[2] J. W. McPherson,et al. A model for stress‐induced metal notching and voiding in very large‐scale‐integrated Al–Si (1%) metallization , 1987 .

[3] J. C. Jaeger,et al. Conduction of Heat in Solids , 1952 .

[4] Jens Lothe John Price Hirth,et al. Theory of Dislocations , 1968 .

[5] Kenji Hinode,et al. Stress‐induced grain boundary fractures in Al–Si interconnects , 1987 .

[6] D. Hull,et al. The growth of grain-boundary voids under stress , 1959 .

[7] Conyers Herring,et al. Diffusional Viscosity of a Polycrystalline Solid , 1950 .

[8] E. Colgan,et al. Interfacial reaction-induced morphological instabilities in thin Al/Pt and Al/Pd films , 1987 .

[9] Koch,et al. 1/f noise and grain-boundary diffusion in aluminum and aluminum alloys. , 1985, Physical review letters.

[10] M. Jackson,et al. Stress relaxation and hillock growth in thin films , 1982 .

[11] P. Flinn,et al. Measurement and Interpretation of stress in aluminum-based metallization as a function of thermal history , 1987, IEEE Transactions on Electron Devices.