StudyontheReliability ofCapacitive ShuntRFMEMS Switch

Studyonthereliability ofcapacitive shunt RF MEMS switch ispresent. Theelectrical failure andmechanical failure mechanism isanalyzed separately. Intheelectrical failure analysis, thebreakdown ofdielectric between up-anddownelectrode ismeasured andanalyzed. Inthemeasurement, a ramping DC voltage of5Vs-1 isapplied anddifferent breakdown voltages areobtained. Fortheswitches with electrode roughness of27.4nm,16.Onmand5.4nm,the breakdown eventmaximumisinthevoltage ranges of 20-40V,30-60Vand 8011OV respectively. In the mechanical failure analysis, thefailure induced bystress is analysis. Thefailure samples ofAlmembrane broken and buckling arepresent. Thebest stress inAlmembrane isatthe range of1020MPa.