High Performance 1.2kV-2.5kV 4H-SiC MOSFETs with Excellent Process Capability and Robustness

In this paper, we show state of the art, low on-resistance, 25mW/1.2kV and 43mW/2.5kV SiC MOSFETs with excellent design robustness and process control such that the parametric spread of key device characteristics are approaching Si products. The impact of starting material variability on device performance is shown and design sensitivity curves are presented.

[1]  P. Losee,et al.  1.2kV class SiC MOSFETs with improved performance over wide operating temperature , 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).