High Performance 1.2kV-2.5kV 4H-SiC MOSFETs with Excellent Process Capability and Robustness
暂无分享,去创建一个
Ljubisa Dragoljub Stevanovic | James W. Kretchmer | Thomas Bert Gorczyca | Peter Almern Losee | Stacey Joy Kennerly | Alexander Viktorovich Bolotnikov | Greg Dunne | P. Losee | L. Stevanovic | J. Kretchmer | G. Dunne | A. Bolotnikov | S. Kennerly | D. Esler | T. Gorczyca | C. Collazo-Davila | Christopher Collazo-Davila | David Alan Lilienfeld | Peter Deeb | David Richard Esler | D. Lilienfeld | Peter Deeb
[1] P. Losee,et al. 1.2kV class SiC MOSFETs with improved performance over wide operating temperature , 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).