论文信息 - Determination of FET noise parameters from 50 Ω noise figure measurements using a distributed noise model

Determination of FET noise parameters from 50 Ω noise figure measurements using a distributed noise model

A method for measuring FET noise parameters is presented. It is based on the determination of a distributed noise model from 50 Ω noise figure measurements without needing a tuner, and taking into account the propagation effects along device electrodes. Experimental results up to 40 GHz are given.

Antonio Lazaro | Lluis Pradell | M. C. Maya | A. Lázaro | L. Pradell

[1] Ulrich L. Rohde,et al. A general noise de-embedding procedure for packaged two-port linear active devices , 1992 .

[2] Lluis Pradell,et al. FET noise-parameter determination using a novel technique based on 50-/spl Omega/ noise-figure measurements , 1999 .

[3] Peter Russer,et al. An efficient method for computer aided noise analysis of linear amplifier networks , 1976 .

[4] M. Pospieszalski. Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence , 1989 .

[5] Abdolali Abdipour,et al. Temperature noise constants extraction of mm-wave FETs from measured S- and noise parameters , 1996, 1996 IEEE MTT-S International Microwave Symposium Digest.

[6] Antonio Lazaro,et al. MEASUREMENT OF ON-WAFER TRANSISTOR NOISE PARAMETERS WITHOUT A TUNER USING UNRESTRICTED NOISE SOURCES , 2002 .

[7] W. Heinrich,et al. Wave Propagation on MESFET Electrodes and its Influence on Transistor Gain , 1987 .

[8] L. Escotte,et al. Semidistributed model of millimeter-wave FET for parameter and noise figure predictions , 1990 .

[9] Antonio Lázaro,et al. FET Noise-Parameter Determination Using a Novel Technique Based on 50-Noise-Figure Measurements , 1999 .

[10] W. A. Davis,et al. Modeling and analysis of GaAs MESFETs considering the wave propagation effect , 1989, IEEE MTT-S International Microwave Symposium Digest.