A microstrip X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate

A two-stage high-power amplifier MMIC was realized with a chip size of 4.5 mm /spl times/ 3 mm operating between 8 GHz and 10 GHz based on a fully integrated microstrip AlGaN/GaN HEMT technology on s.i. SiC substrate. The MMIC device delivers a maximum pulsed output power of 8.9 W (39.5 dBm) at 8.5 GHz at V/sub DS/ = 31 V, 10 % duty cycle, and more than 6 dB gain compression level, and features a linear gain in excess of 20 dB.

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