Electrical characteristics and trap signatures for Schottky barrier diodes on 4H-SiC, GaN-on-GaN, AlGaN/GaN epitaxial substrates
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D. Planson | R. Sommet | C. Sonneville | É. Frayssinet | P. Mierry | P. Raja | Yvon Cordier | Christophe Raynaud | Hervé Morel | Shikha Kumari | Rashmi Singh | Shivam Kumar | Narasimha Murty | Luong Viêt | Phung | Thi Huong Ngo | Hassan Maher | J. Nallatamby