论文信息 - Atomic hydrogen-induced degradation of the Si/SiO 2 structure

Atomic hydrogen-induced degradation of the Si/SiO 2 structure

Abstract At ambient temperature , atomic hydrogen from a remote plasma produces large numbers of interface states which are not due to silicon dangling bonds. The release of atomic hydrogen by hot electrons or by radiation during device operation will inevitably lead to device degradation.

J. H. Stathis | J. Stathis | E. Cartier | E. Cartier

[1] Y. Nissan-Cohen,et al. The effect of hydrogen on trap generation, positive charge trapping, and time-dependent dielectric breakdown of gate oxides , 1988, IEEE Electron Device Letters.

[2] James Stasiak,et al. Trap creation in silicon dioxide produced by hot electrons , 1989 .

[3] K. L. Brower. Passivation of paramagnetic Si‐SiO2 interface states with molecular hydrogen , 1988 .

[4] James H. Stathis,et al. Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen , 1993 .

[5] Stesmans. Relationship between stress and dangling bond generation at the (111)Si/SiO2 interface. , 1993, Physical review letters.

[6] Eduard A. Cartier,et al. Hot-electron dynamics in SiO 2 and the degradation of the Si/SiO 2 -interface , 1993 .

[7] Bruce E. Deal,et al. Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers , 1981 .

[8] Eduard A. Cartier,et al. Atomic hydrogen‐induced interface degradation of reoxidized‐nitrided silicon dioxide on silicon , 1994 .

[9] Stathis,et al. Atomic hydrogen reactions with Pb centers at the (100) Si/SiO2 interface. , 1994, Physical review letters.

[10] K. L. Brower,et al. Chemical kinetics of hydrogen and (111)Si-SiO2 interface defects , 1990 .