论文信息 - A study of MBE growth and thermal annealing of p-type long wavelength HgCdTe

A study of MBE growth and thermal annealing of p-type long wavelength HgCdTe

The results of MBE growth and annealing of p-type HgCdTe are described in the paper. It is found that the surface morphology is sensitive to the growth temperature. HgCdTe epilayers showed excellent lateral uniformity in x-values as well as in thickness, relative deviations for x and thickness over a 2 in. wafer were found to be 0.18% and 2.19%, respectively. The hole concentrations in a range of (1-2) x 10 16 cm -3 with hole mobilities higher than 600 cm 2 V -1 s -1 were obtained by p-annealing. MBE grown p-HgCdTe epilayers were successfully incorporated into 32 x 32 focal plane arrays detectors.

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