Dynamic observation of silicon homoepitaxial growth by high‐temperature scanning tunneling microscopy

The dynamic process of Si crystal growth on a Si(111)7×7 surface was studied in situ using high‐temperature scanning tunneling microscopy. Si was evaporated onto a Si(111)7×7 surface, kept at 350 °C, and the crystal growth was observed. Both step‐flow growth and island growth were observed. In the step‐flow growth, the [112] steps became jagged with [2] steps. At the [112] steps, new adatoms appeared in rows along the step edges. In the island growth, the multilayer growth was observed. A rearrangement of adatoms in the first layer was observed when the second layer was formed on the first layer.