论文信息 - Pulsed laser annealing of zinc implanted GaAs

Pulsed laser annealing of zinc implanted GaAs

Samples of n type GaAs implanted with 1015Zn+/cm2 at room temperature were irradiated with a ruby laser of pulse length 0.8 ms. For samples coated with Si3N4 a laser energy of 1.5?2.5 J/cm2 produced electrical activity of 40?50% of the implanted dose. Peak hole concentrations up to about 7 × 1019 cm?3 were measured. Uncoated samples irradiated with similar laser energies were not electrically active.

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