Microwave characteristics of MBE grown resonant tunneling devices

Resonant tunnel devices grown by molecular-beam epitaxy (MBE) have been measured experimentally using network analysis techniques from 130 MHz to 20 GHz. A circuit model for the devices has been extracted for two different InGaAs well structures at a fixed bias point, which fits the measured data well and is useful for circuit design. Additionally, the device impedance has been measured as a function of bias at a fixed frequency point. Complicated capacitance characteristics were observed for the devices with large-indium-content wells.<<ETX>>