论文信息 - High current density GaAs and GaSb photovoltaic cells for laser power beaming

High current density GaAs and GaSb photovoltaic cells for laser power beaming

AlGaAs/GaAs- and GaSb-based laser power PV converters operating at output photocurrent densities up to 100 A/cm/sup 2/ were fabricated. Fill Factor values of 0.85-0.87 at laser power density P/sub laser/=1.0-50 W/cm/sup 2/ and FF=0.80-0.83 at P/sub laser/=100-200 W/cm/sup 2/ were measured in the GaAs-based cells. Open circuit voltage of the GaAs cells increased from 1.15 V at P/sub laser/=5 W/cm/sup 2/ to 1.26 V at 200 W/cm/sup 2/. Efficiency of monochromatic (/spl lambda//sub laser/=820-850 nm) power conversion increased up to 56% with increasing P/sub laser/ up to 50 W/cm/sup 2/, and further decreased by 3-4% at P/sub laser/=200 W/cm/sup 2/. AlGaAs/GaAs converters with internal Bragg reflector ensured the photoresponse increase in the wavelength range of 830-870 nm as well as improvement of radiation resistance. Also, AlGaAsSb/GaSb laser power converters were developed for operation in spectral range of 1300-1680 nm.

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