Threshold simulation of 1.3-μm oxide-confined in-plane quantum-dot (InGa)As/GaAs lasers

In the paper, the self-consistent optical–electrical–thermal-gain model of the oxide-confined long-wavelength 1.3-μm quantum-dot (InGa)As/GaAs diode laser is demonstrated. The model has been applied to analyse room-temperature (RT) threshold-operation characteristics of the advanced laser of this kind. It may be used to describe physics of the above arsenide-based diode lasers to better understand their threshold performance and finally to optimize their structures.

[1]  D. Deppe,et al.  Tunneling transport and diffusion in weakly coupled quantum dot ensembles , 1998 .

[2]  P. Meissner,et al.  An analytical solution of the lateral current spreading and diffusion problem in narrow oxide stripe (GaAl)As/GaAs DH lasers , 1982 .

[3]  Mikhail V. Maximov,et al.  Low threshold, large To injection laser emission from (InGa)As quantum dots , 1994 .

[4]  Andreas Stintz,et al.  Extremely low room-temperature threshold current density diode lasers using InAs dots in In/sub 0.15/Ga/sub 0.85/As quantum well , 1999 .

[5]  Diana L. Huffaker,et al.  Spontaneous emission and threshold characteristics of 1.3-/spl mu/m InGaAs-GaAs quantum-dot GaAs-based lasers , 1999 .

[6]  Yong-Hee Lee,et al.  Carrier diffusion in oxidized Vertical-Cavity Surface-Emitting Lasers Determined from lateral spontaneous emission , 1997 .

[7]  Mikhail V. Maximov,et al.  Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation , 2001 .

[8]  H. Ueba,et al.  Structural characterization of Si0.7Ge0.3 layers grown on Si(001) substrates by molecular beam epitaxy , 1997 .

[9]  Nikolai N. Ledentsov,et al.  Quantum dot heterostructures , 1999 .

[10]  Wolfgang Werner Langbein,et al.  Structural and electrooptical characteristics of quantum dots emitting at 1.3 /spl mu/m on gallium arsenide , 2001 .

[11]  M. Asada,et al.  Gain and the threshold of three-dimensional quantum-box lasers , 1986 .

[12]  K. Chiang,et al.  Analysis of optical fibers by the effective-index method. , 1986, Applied optics.

[13]  H. Sakaki,et al.  Multidimensional quantum well laser and temperature dependence of its threshold current , 1982 .

[14]  H. Casey,et al.  Optical-field calculations for lossy multiple-layer AlxGa1−xN/InxGa1−xN laser diodes , 1998 .