VTEAM – A General Model for Voltage Controlled Memristors

Memristors are novel electrical devices used for a variety of applications, including memory, logic circuits, and neuromorphic systems. Memristive technologies are attractive due to their nonvolatility, scalability, and compatibility with CMOS. Numerous physical experiments have shown the existence of a threshold voltage in some physical memristors. Additionally, as shown in this brief, some applications require voltage-controlled memristors to operate properly. In this brief, a Voltage ThrEshold Adaptive Memristor (VTEAM) model is proposed to describe the behavior of voltage-controlled memristors. The VTEAM model extends the previously proposed ThrEshold Adaptive Memristor (TEAM) model, which describes current-controlled memristors. The VTEAM model has similar advantages as the TEAM model, i.e., it is simple, general, and flexible, and can characterize different voltage-controlled memristors. The VTEAM model is accurate (below 1.5% in terms of the relative root-mean-square error) and computationally efficient as compared with existing memristor models and experimental results describing different memristive technologies.

[1]  Uri C. Weiser,et al.  MAGIC—Memristor-Aided Logic , 2014, IEEE Transactions on Circuits and Systems II: Express Briefs.

[2]  G. Subramanyam,et al.  A Memristor Device Model , 2011, IEEE Electron Device Letters.

[3]  Leon O. Chua Resistance switching memories are memristors , 2011 .

[4]  J. Yang,et al.  Switching dynamics in titanium dioxide memristive devices , 2009 .

[5]  D. Biolek,et al.  Pinched hysteretic loops of ideal memristors, memcapacitors and meminductors must be 'self-crossing' , 2011 .

[6]  Stephen J. Wolf,et al.  The elusive memristor: properties of basic electrical circuits , 2008, 0807.3994.

[7]  Jan A Snyman,et al.  Practical Mathematical Optimization: An Introduction to Basic Optimization Theory and Classical and New Gradient-Based Algorithms , 2005 .

[8]  D. Stewart,et al.  The missing memristor found , 2008, Nature.

[9]  Edgar N. Reyes,et al.  Optimization using simulated annealing , 1998, Northcon/98. Conference Proceedings (Cat. No.98CH36264).

[10]  D. R. Strachan,et al.  Memristive switching of single-component metallic nanowires , 2010, Nanotechnology.

[11]  Uri C. Weiser,et al.  TEAM: ThrEshold Adaptive Memristor Model , 2013, IEEE Transactions on Circuits and Systems I: Regular Papers.

[12]  J. Grollier,et al.  A ferroelectric memristor. , 2012, Nature materials.

[13]  L.O. Chua,et al.  Memristive devices and systems , 1976, Proceedings of the IEEE.

[14]  Frank Z. Wang,et al.  A Triangular Periodic Table of Elementary Circuit Elements , 2013, IEEE Transactions on Circuits and Systems I: Regular Papers.

[15]  Dalibor Biolek,et al.  SPICE Model of Memristor with Nonlinear Dopant Drift , 2009 .

[16]  Fernando Corinto,et al.  A Boundary Condition-Based Approach to the Modeling of Memristor Nanostructures , 2012, IEEE Transactions on Circuits and Systems I: Regular Papers.

[17]  Uri C. Weiser,et al.  Memristor-Based Material Implication (IMPLY) Logic: Design Principles and Methodologies , 2014, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

[18]  L. Chua Memristor-The missing circuit element , 1971 .

[19]  Haifeng Cheng,et al.  Analog memristors based on thickening/thinning of Ag nanofilaments in amorphous manganite thin films. , 2013, ACS applied materials & interfaces.

[20]  E. Lehtonen,et al.  CNN using memristors for neighborhood connections , 2010, 2010 12th International Workshop on Cellular Nanoscale Networks and their Applications (CNNA 2010).

[21]  C. Toumazou,et al.  A Versatile Memristor Model With Nonlinear Dopant Kinetics , 2011, IEEE Transactions on Electron Devices.

[22]  Eitan Yaakobi,et al.  Information-Theoretic Sneak-Path Mitigation in Memristor Crossbar Arrays , 2016, IEEE Transactions on Information Theory.

[23]  D. Ritter,et al.  Resistive Switching in $\hbox{HfO}_{2}$ Probed by a Metal–Insulator–Semiconductor Bipolar Transistor , 2012, IEEE Electron Device Letters.