Comparative study of GaAs and GaInNAs/GaAs multi‐quantum well solar cells
暂无分享,去创建一个
Naci Balkan | Maxime Hugues | H. M. Khalil | S. Mazzucato | N. Balkan | B. Royall | S. Mazzucato | H. Khalil | M. Hugues | J. Roberts | J. S. Roberts | B Royall
[1] Philip Chiu,et al. InGaP/GaAs/InGaAs 41% concentrator cells using bi-facial epigrowth , 2010, 2010 35th IEEE Photovoltaic Specialists Conference.
[2] L. Williams,et al. III V dilute nitride-based multi-quantum well solar cell , 2007 .
[3] Wladek Walukiewicz,et al. Band Anticrossing in GaInNAs Alloys , 1999 .
[4] Sarah R. Kurtz,et al. 1-eV solar cells with GaInNAs active layer , 1998 .
[5] Keith W. J. Barnham,et al. A new approach to high‐efficiency multi‐band‐gap solar cells , 1990 .
[6] Martin D. Dawson,et al. Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content , 2000 .
[7] T. Jouhti,et al. Growth-temperature-dependent (self-)annealing-induced blueshift of photoluminescence from 1.3 μm GaInNAs/GaAs quantum wells , 2003 .
[8] Martin A. Green,et al. Solar cell efficiency tables (version 37) , 2011 .
[9] Frank Dimroth,et al. Optimization of annealing conditions of (GaIn)(NAs) for solar cell applications , 2008 .
[10] D. Law,et al. 40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells , 2007 .
[11] Jean-Yves Duboz,et al. Blue-shift mechanisms in annealed (Ga,In)(N,As)/GaAs quantum wells , 2007 .
[12] Y. Su,et al. Strain-Compensated GaAsN/InGaAs Superlattice Structure Solar Cells , 2006 .
[13] Richard J. Potter,et al. Optical properties of GaNAs and GaInAsN quantum wells , 2004 .
[14] J. Massies,et al. (Ga,In)(N,As)-based solar cells grown by molecular beam epitaxy , 2004 .