论文信息 - Interpreting mid-wave infrared MWIR HgCdTe photodetectors

Interpreting mid-wave infrared MWIR HgCdTe photodetectors

Abstract This paper analyses the electro-optical behavior of simple, near-optimal MWIR HgCdTe photodiodes. These devices operate near fundamental materials limits making them both excellent in quality and ideal for understanding the most basic aspects of infrared photodiode performance. Measurements of representative diodes are explained by models that are simple but still accurate in describing optical and electrical properties.

W. E. Tennant | W. Tennant

[1] E. Finkman,et al. Recombination mechanisms in p-type HgCdTe: Freezeout and background flux effects , 1985 .

[2] S. Krishnamurthy,et al. Minority carrier lifetimes in HgCdTe alloys , 2006 .

[3] J. Schmit,et al. Energy gap versus alloy composition and temperature in Hg1−xCdxTe , 1982 .

[4] Majid Zandian,et al. Planar p‐on‐n HgCdTe heterostructure photovoltaic detectors , 1993 .

[5] K. J. Riley,et al. Background and temperature dependent current‐voltage characteristics of HgCdTe photodiodes , 1982 .

[6] I. Vurgaftman,et al. HgCdTe negative luminescence devices with high internal and external efficiencies in the midinfrared , 2007 .

[7] R. G. Humphreys,et al. Radiative lifetime in semiconductors for infrared detection , 1983 .

[8] Majid Zandian,et al. MBE HgCdTe Technology: A Very General Solution to IR Detection, Described by “Rule 07”, a Very Convenient Heuristic , 2008 .

[9] J. Schmit,et al. Calculation of intrinsic carrier concentration in Hg1−xCdxTe , 1983 .

[10] W. E. Tennant,et al. “Rule 07” Revisited: Still a Good Heuristic Predictor of p/n HgCdTe Photodiode Performance? , 2010 .

[11] W. Shockley,et al. Photon-Radiative Recombination of Electrons and Holes in Germanium , 1954 .