论文信息 - Determining the Energy Distribution of Pulse-Radiation-Induced Charge in MOS Structures from Rapid Annealing Measurements

Determining the Energy Distribution of Pulse-Radiation-Induced Charge in MOS Structures from Rapid Annealing Measurements

Activation energy distributions for the positive space charge induced in MOS structures by pulsed ionizing radiation have been calculated from shortterm, isothermal annealing data. These distributions are compared for conventional thermal oxides and oxides implanted with aluminum or sodium ions.

Harold L. Hughes | M. Simons | H. Hughes | M. Simons

[1] H. Hughes,et al. Short-Term Charge Annealing in Electron-Irradiated Silicon Dioxide , 1971 .

[2] J. Fowler. X-ray induced conductivity in insulating materials , 1956, Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences.

[3] Richard Williams,et al. Photoemission of Electrons from Silicon into Silicon Dioxide , 1965 .

[4] Vitaly Danchenko,et al. Characteristics of thermal annealing of radiation damage in MOSFET's. , 1968 .

[5] K. Aubuchon,et al. Radiation Hardening of P-MOS Devices by Optimization of the Thermal Si02 Gate Insulator , 1971 .

[6] K. Aubuchon,et al. Radiation Effects in Modified Oxide Insulators in MOS Structures , 1968 .

[7] H. Hughes,et al. Dependence of MOS Device Radiation-Sensitivity on Oxide Impurities , 1972 .

[8] T. W. Hickmott. Thermoluminescence and Color Centers in rf‐Sputtered SiO2 Films , 1972 .

[9] A. S. Grove,et al. Effects of ionizing radiation on oxidized silicon surfaces and planar devices , 1967 .

[10] E. Paige,et al. CXI. The optical effects of radiation induced atomic damage in quartz , 1956 .

[11] A. Goodman,et al. Photoemission of Holes from Silicon into Silicon Dioxide , 1966 .