Determining the Energy Distribution of Pulse-Radiation-Induced Charge in MOS Structures from Rapid Annealing Measurements
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[1] H. Hughes,et al. Short-Term Charge Annealing in Electron-Irradiated Silicon Dioxide , 1971 .
[2] J. Fowler. X-ray induced conductivity in insulating materials , 1956, Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences.
[3] Richard Williams,et al. Photoemission of Electrons from Silicon into Silicon Dioxide , 1965 .
[4] Vitaly Danchenko,et al. Characteristics of thermal annealing of radiation damage in MOSFET's. , 1968 .
[5] K. Aubuchon,et al. Radiation Hardening of P-MOS Devices by Optimization of the Thermal Si02 Gate Insulator , 1971 .
[6] K. Aubuchon,et al. Radiation Effects in Modified Oxide Insulators in MOS Structures , 1968 .
[7] H. Hughes,et al. Dependence of MOS Device Radiation-Sensitivity on Oxide Impurities , 1972 .
[8] T. W. Hickmott. Thermoluminescence and Color Centers in rf‐Sputtered SiO2 Films , 1972 .
[9] A. S. Grove,et al. Effects of ionizing radiation on oxidized silicon surfaces and planar devices , 1967 .
[10] E. Paige,et al. CXI. The optical effects of radiation induced atomic damage in quartz , 1956 .
[11] A. Goodman,et al. Photoemission of Holes from Silicon into Silicon Dioxide , 1966 .