A broadband 0.6 to 1 THz CMOS imaging detector with an integrated lens

This paper presents a lens-integrated terahertz imaging detector implemented in a 65 nm bulk CMOS process technology. The back-side illumination through a silicon lens increases the imaging SNR by 7–15 dB. The broadband detector design has been verified from 0.6 to 1 THz. At 1 THz the circuit achieves a noise equivalent power (NEP) of 66 pW/√Hz and a responsivity (Rv) of 800 V/W for back-side illumination. The first 1 THz CMOS active imaging results with a lens are presented.

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