论文信息 - Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy - 字舞流文

Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy

S. Brückner | O. Supplie | P. Kleinschmidt | A. Dobrich | T. Hannappel | M. Steidl | A. Paszuk | W. Zhao | W. Zhao