A simple and accurate method for extracting the emitter and thermal resistance of BJTs and HBTs
暂无分享,去创建一个
[1] Yuji Yamamoto,et al. A 0.13µm SiGe BiCMOS technology featuring f T /f max of 240/330 GHz and gate delays below 3 ps , 2009 .
[2] D.F. Williams,et al. Transmission line capacitance measurement , 1991, IEEE Microwave and Guided Wave Letters.
[3] D.F. Williams,et al. Characteristic impedance determination using propagation constant measurement , 1991, IEEE Microwave and Guided Wave Letters.
[4] Yuji Yamamoto,et al. A 0.13µm SiGe BiCMOS technology featuring fT/fmax of 240/330 GHz and gate delays below 3 ps , 2010, 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
[5] D. Celi,et al. State-of-the-art and future perspectives in calibration and de-embedding techniques for characterization of advanced SiGe HBTs featuring sub-THz fT/fMAX , 2012, 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
[6] R. Doerner,et al. Sensitivity analysis of wafer-level over-temperature RF calibration , 2012, 80th ARFTG Microwave Measurement Conference.