Simulation and optimization of EJ-MOSFETs

Abstract Electrically variable shallow junction (EJ) MOSFETs with a channel length of 50 nm, source–drain distances between 150 nm and 9 μm, and different channel dopings have been systematically investigated by means of 2D device simulation. SOI EJ-MOSFETs with a highly doped channel show a subthreshold behavior similar to the comparable bulk version. By decreasing the source–drain distance down to 150 nm and lowering the channel doping the on-currents of EJ-MOSFETs can be increased by more than two orders of magnitude.

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