A low energy drive for high power 300 A-1000 V IGBT

An insulated-gate bipolar transistor gate driver circuit that requires few components, is easy to implement, is totally insulated and performs well over the range of 10 Hz to 600 kHz is described. It is shown that the reduction of driver power consumption results in a reduction of the power supplies and that the low component number and the reduced transformer provide a very compact circuit, making integration possible. The circuit performance and operation are discussed.<<ETX>>