Nanometer-scale linewidth fluctuations caused by polymer aggregates in resist films
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Kenji Yamazaki | Kenji Kurihara | Hideo Namatsu | Toru Yamaguchi | Masao Nagase | M. Nagase | H. Namatsu | K. Kurihara | K. Yamazaki | Toru Yamaguchi
[1] Yasuo Takahashi,et al. Size dependence of the characteristics of Si single-electron transistors on SIMOX substrates , 1996 .
[2] Nano-scale fluctuations in electron beam resist pattern evaluated by atomic force microscopy , 1996 .
[3] M. Nagase,et al. An Electron Beam Nanolithography System and its Application to Si Nanofabrication , 1995 .
[4] Kenji Kurihara,et al. Fabrication of sub‐10‐nm silicon lines with minimum fluctuation , 1995 .
[5] Shinji Okazaki,et al. Nano edge roughness in polymer resist patterns , 1993 .
[6] Wei Chen,et al. Fabrication of 5–7 nm wide etched lines in silicon using 100 keV electron‐beam lithography and polymethylmethacrylate resist , 1993 .
[7] Eiji Takeda,et al. Molecular Scale E-Beam Resist Development Simulation for Pattern Fluctuation Analysis , 1993 .
[8] J. Spĕvác̆ek,et al. High resolution 1H-NMR study of association of polymers in solution. Poly(methyl methacrylate) and poly(vinyl chloride)† , 1975 .