论文信息 - Reduced hot-carrier reliability degradation of x-ray irradiated MOSFETs in a 0.25 μm CMOS technology with ultra-thin gate oxide - 字舞流文

Reduced hot-carrier reliability degradation of x-ray irradiated MOSFETs in a 0.25 μm CMOS technology with ultra-thin gate oxide

L. C. Hsia | A. Acovic | J. M. Aitken | C.C.-H. Hsu

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