Charge‐layer design considerations in SAGCM InGaAs/InAlAs avalanche photodiodes
暂无分享,去创建一个
Rolf Aidam | Frank Rutz | P. Kleinow | Wolfgang Bronner | Martin Walther | F. Rutz | W. Bronner | M. Walther | P. Kleinow | R. Aidam | H. Heussen | H. Heussen
[1] Jerry R. Meyer,et al. Band parameters for III–V compound semiconductors and their alloys , 2001 .
[2] E. Ishimura,et al. Design and Characteristics of Guardring-Free Planar AlInAs Avalanche Photodiodes , 2009, Journal of Lightwave Technology.
[3] F. Pommereau,et al. High Gain $\times$ Bandwidth Product Over 140-GHz Planar Junction AlInAs Avalanche Photodiodes , 2008, IEEE Photonics Technology Letters.
[4] Rolf Aidam,et al. Experimental investigation of the charge-layer doping level in InGaAs/InAlAs avalanche photodiodes , 2015 .
[5] M. Jazwiecki,et al. A New Planar InGaAs–InAlAs Avalanche Photodiode , 2006, IEEE Photonics Technology Letters.
[6] M. Hayat,et al. Multi-Gain-Stage InGaAs Avalanche Photodiode With Enhanced Gain and Reduced Excess Noise , 2013, IEEE Journal of the Electron Devices Society.
[7] Yi Gu,et al. Low Operating Voltage and Small Gain Slope of InGaAs APDs With p-Type Multiplication Layer , 2015, IEEE Photonics Technology Letters.
[8] J Muszalski,et al. Low dark current InGaAs/InAlAs/InP avalanche photodiode , 2009 .
[9] Masahiro Nada,et al. Inverted InAlAs/InGaAs Avalanche Photodiode with Low–High–Low Electric Field Profile , 2012 .
[10] S. R. Forrest,et al. Optical response time of In0.53Ga0.47As/InP avalanche photodiodes , 1982 .
[11] G. Buller,et al. Design and performance of an InGaAs-InP single-photon avalanche diode detector , 2006, IEEE Journal of Quantum Electronics.
[12] Richard Scritchfield,et al. Gated IR Imaging with 128 × 128 HgCdTe Electron Avalanche Photodiode FPA , 2008 .