Electrical evaluation of innovating processes for improving SOS materials

Abstract Recent variants of silicon on sapphire films, prepared using three techniques (solid-phase epitaxial regrowth, two-step epitaxial growth and double implant), are investigated in terms of material and device properties. The pseudo-MOSFET analysis shows that the threshold voltage, electron mobility and trap density at the back Si–Al2O3 interface are greatly improved by the new processes. The results are confirmed by device characterization, which shows good properties of the front-channel and Si–SiO2 interface and low short-channel effects in doped and ‘undoped’ MOSFETs.