Delay and Energy Consumption Analysis of Conventional SRAM

The energy consumption and delay in read/write operation of conventional SRAM is investigated analytically as well as by simulation. Explicit analytical expressions for the energy consumption and delay in read and write operation as a function of device parameters and supply voltage are derived. The expressions are useful in predicting the effect of parameter changes on the energy consumption and speed as well as in optimizing the design of conventional SRAM. HSPICE simulation in standard 0.25μm CMOS technology confirms precision of analytical expressions derived from this paper. Keywords—Read energy consumption, write energy consumption, read delay, write delay.

[1]  Lee-Sup Kim,et al.  A low-power SRAM using hierarchical bit line and local sense amplifiers , 2005, IEEE Journal of Solid-State Circuits.

[2]  ffalourd,et al.  Integrated Circuit Design , 2016, Lecture Notes in Computer Science.

[3]  Kenneth W. Martin,et al.  Digital Integrated Circuit Design , 1999 .

[4]  Shi-Yu Huang,et al.  A low-power SRAM design using quiet-bitline architecture , 2005, 2005 IEEE International Workshop on Memory Technology, Design, and Testing (MTDT'05).

[5]  Keshab K. Parhi,et al.  Low power SRAM design using hierarchical divided bit-line approach , 1998, Proceedings International Conference on Computer Design. VLSI in Computers and Processors (Cat. No.98CB36273).