High-frequency four noise parameters of silicon-on-insulator-based technology MOSFET for the design of low-noise RF integrated circuits

An exhaustive experimental study of the high-frequency noise properties of MOSFET in silicon-on-insulator (SOI) technology is presented. Various gate geometries are fabricated to study the influence of effective channel length, gate finger width, and gate sheet resistivity on the four noise parameters. The high level of MOSFET sensitivity to the minimum noise matching condition is demonstrated. From experimental results, optimal ways to realize ultra low noise amplifiers are discussed. The capability of the fully depleted standard SOI CMOS process for realizing low-noise amplifiers for multigigahertz portable communication systems is shown.

[1]  Jean-Pierre Colinge,et al.  Fully-depleted SOI CMOS for analog applications , 1998 .

[2]  W. Dahlke,et al.  Theory of Noisy Fourpoles , 1956, Proceedings of the IRE.

[3]  J. Raskin,et al.  Accurate SOI MOSFET characterization at microwave frequencies for device performance optimization and analog modeling , 1998 .

[4]  E. Morifuji,et al.  High-frequency AC characteristics of 1.5 nm gate oxide MOSFETs , 1996, International Electron Devices Meeting. Technical Digest.

[5]  C. Mead,et al.  White noise in MOS transistors and resistors , 1993, IEEE Circuits and Devices Magazine.

[6]  Denis Flandre,et al.  A low-voltage, low-power microwave SOI MOSFET , 1996, 1996 IEEE International SOI Conference Proceedings.

[7]  E. Vittoz,et al.  An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications , 1995 .

[8]  A. Ziel.  Gate noise in field effect transistors at moderately high frequencies , 1963 .

[9]  Lode K. J. Vandamme,et al.  Noise as a diagnostic tool for quality and reliability of electronic devices , 1994 .

[10]  Francois Danneville,et al.  Microscopic noise modeling and macroscopic noise models: how good a connection? [FETs] , 1994 .

[11]  Asad A. Abidi,et al.  A 1 GHz CMOS RF front-end IC for a direct-conversion wireless receiver , 1996, IEEE J. Solid State Circuits.

[12]  T.H. Lee,et al.  A 1.5 V, 1.5 GHz CMOS low noise amplifier , 1996, 1996 Symposium on VLSI Circuits. Digest of Technical Papers.

[13]  H. Williams,et al.  Analytical and experimental studies of thermal noise in MOSFET's , 1994 .

[14]  W. Budde,et al.  A SOI-RF-CMOS technology on high resistivity SIMOX substrates for microwave applications to 5 GHz , 1997 .

[15]  Jean-Pierre Raskin,et al.  Direct extraction of the series equivalent circuit parameters for the small-signal model of SOI MOSFETs , 1997 .

[16]  G. Dambrine,et al.  A new method for determining the FET small-signal equivalent circuit , 1988 .

[17]  C. Yamaguchi,et al.  Investigation of a multigigahertz MOSFET amplifier with an on-chip inductor fabricated on a SIMOX wafer , 1998 .

[18]  Aldert Van der Ziel,et al.  Noise in measurements , 1976 .

[19]  H. Olson.  Literature Review : NOISE: SOURCES, CHARACTERIZATION, MEASUREMENT Albert Van Der Ziel Prentice-Hall, Inc., Englewood Cliffs, N. J. (1970) , 1972 .

[20]  L.K.J. Vandamme,et al.  1/f noise in MOS devices, mobility or number fluctuations? , 1994 .

[21]  Hermann A. Haus,et al.  Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect-Transistors , 1975 .

[22]  Denis Flandre,et al.  Comparison of TiSi2 , CoSi2, and NiSi for Thin‐Film Silicon‐on‐Insulator Applications , 1997 .

[23]  Bonkee Kim,et al.  Monolithic planar RF inductor and waveguide structures on silicon with performance comparable to those in GaAs MMIC , 1995, Proceedings of International Electron Devices Meeting.

[24]  M. Pospieszalski.  Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence , 1989 .

[25]  Francois Danneville,et al.  A new extrinsic equivalent circuit of HEMT's including noise for millimeter-wave circuit design , 1998 .

[26]  A.L. Caviglia,et al.  Microwave performance of SOI n-MOSFETs and coplanar waveguides , 1991, IEEE Electron Device Letters.

[27]  I. Lagnado,et al.  Microwave performance of optically fabricated T-gate thin film silicon-on-sapphire based MOSFET's , 1995, IEEE Electron Device Letters.

[28]  Kenneth E. Goodson,et al.  Measurement and modeling of self-heating in SOI nMOSFET's , 1994 .

[29]  P. M. Asbeck,et al.  A 2.4-GHz silicon-on-sapphire CMOS low-noise amplifier , 1997 .

[30]  A. Cappy,et al.  Noise modeling and measurement techniques (HEMTs) , 1988 .

[31]  N. Suematsu.  On-chip matching Si-MMIC for mobile communication terminal application , 1997, 1997 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Technical Papers.

[32]  R.R. Siergiej,et al.  MICROX-an all-silicon technology for monolithic microwave integrated circuits , 1993, IEEE Electron Device Letters.

[33]  John H. Scofield,et al.  Reconciliation of different gate-voltage dependencies of 1/f noise in n-MOS and p-MOS transistors , 1994 .

[34]  T. Tsuchiya,et al.  Experimental 0.25-/spl mu/m-gate fully depleted CMOS/SIMOX process using a new two-step LOCOS isolation technique , 1995 .

[35]  D. Hisamoto,et al.  Silicon RF devices fabricated by ULSI processes featuring 0.1-/spl mu/m SOI-CMOS and suspended inductors , 1996, 1996 Symposium on VLSI Technology. Digest of Technical Papers.

[36]  S. Kubo,et al.  A high performance CBiCMOS with novel self-aligned vertical PNP transistors , 1994, Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

[37]  Francois Danneville,et al.  A new method for on wafer noise measurement , 1993 .

[38]  D. Lamey,et al.  Silicon RF-GCMOS IC technology for RF mixed-mode wireless applications , 1997, 1997 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Technical Papers.

[39]  S. P. Voinigescu,et al.  An assessment of the state-of-the-art 0.5 /spl mu/m bulk CMOS technology for RF applications , 1995, Proceedings of International Electron Devices Meeting.