论文信息 - An abuttable CCD imager for visible and X-ray focal plane arrays

An abuttable CCD imager for visible and X-ray focal plane arrays

Large multichip arrays for close-abutted CCDs (charged-coupled devices) are needed for surveillance applications in the visible band and for X-ray astronomy missions such as the Advanced X-ray Astrophysics Facility and the ASTRO-D satellite. A 420*420 pixel frame-transfer CCD imager which is designed to be abutted to other imagers on three sides so that arrays of 2*N chips can be constructed has been developed. A three-phase, triple-poly, buried-channel process is used, and the die size is 12 mm*20 mm. The arrays provide low-noise readout circuitry and high charge-transfer efficiency at low charge levels, critical requirements for both of the above applications. The device has also been shown to be suitable as a soft X-ray imager operating in a spectroscopic mode.<<ETX>>

[1] M. King,et al. A deep-depletion CCD imager for soft X-ray, visible, and near-infrared sensing , 1985, IEEE Transactions on Electron Devices.

[2] David N. Burrows,et al. Penn State Imaging X-Ray Spectrometer , 1989, Optics & Photonics.

[3] K. Koyama. The ASTRO-D X-Ray Astronomy Mission , 1989, Optics & Photonics.

[4] Martin C. Peckerar,et al. X‐ray imaging with a charge‐coupled device fabricated on a high‐resistivity silicon substrate , 1981 .

[5] Joseph P. Ellul,et al. A Buttable 2048 X 96 Element TDI Imaging Array , 1984, Optics & Photonics.

[6] Barry E. Burke,et al. 420 X420 Charge-Coupled-Device Imager And Four-Chip Hybrid Focal Plane , 1987 .

[7] Eric G. Stevens,et al. A 1.4-million-element CCD image sensor , 1987, 1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.

[8] T. Watanabe,et al. Low-noise operation in buried-channel MOSFET's , 1985, IEEE Electron Device Letters.

[9] Martin C. Weisskopf,et al. The advanced X-ray astrophysics facility - An overview , 1987 .

[10] K. Yamaguchi,et al. Theoretical study of a channel-doped separate gate Si MOSFET (SG-MOSFET) by two-dimensional computer simulation , 1981, IEEE Transactions on Electron Devices.