Spatial modes of a concentric-circle-grating surface-emitting, AlGaAs/GaAs quantum well semiconductor laser

We demonstrate the fabrication and operation of an AlGaAs surface‐emitting semiconductor laser, grown by molecular‐beam epitaxy, that incorporates a circularly symmetric grating of period Λ=0.25 μm fabricated using electron‐beam lithography. Azimuthal variations in the grating linewidth have a significant impact on the spatial modes of the laser.