Circuit demonstration of radiation hardened chalcogenide non-volatile memory

BAE SYSTEMS in Manassas, Virginia, and Ovonyx, Inc., have previously reported electrical test results fiom stand-alone single-bit chalcogenide memories. In this paper we present a description of two test chips, one that has been used to integrate the chalcogenide memory element with BAE SYSTEMS' radiation hardened 0.5 pm CMOS technology, and another to develop 64 kbit arrays with full write-read circuitry suitable for environmental and radiation testing. Electrical test results fiom these test chips will be presented showing full functionality.

[1]  R. Quinn,et al.  Chalcogenide-based non-volatile memory technology , 2001, 2001 IEEE Aerospace Conference Proceedings (Cat. No.01TH8542).

[2]  J. H. Coombs,et al.  Laser‐induced crystallization phenomena in GeTe‐based alloys. II. Composition dependence of nucleation and growth , 1995 .

[3]  H. Fritzsche,et al.  Electronic Phenomena in Amorphous Semiconductors , 1972 .

[4]  Tetsuya Akiyama,et al.  High-sensitivity overwritable phase-change optical disk for PD systems , 1995, Other Conferences.

[5]  N. Yamada,et al.  Rapid‐phase transitions of GeTe‐Sb2Te3 pseudobinary amorphous thin films for an optical disk memory , 1991 .

[6]  Nobuo Akahira,et al.  Recent Advances In Erasable Phase-Change Optical Disks , 1988, Photonics West - Lasers and Applications in Science and Engineering.

[7]  A. Waterman,et al.  The Electrical Conductivity of Molybdenite , 1923 .

[8]  Hang Chen,et al.  The structure and crystallization characteristics of phase change optical disk material Ge1Sb2Te4 , 1995 .

[9]  S. Hudgens,et al.  Total dose radiation response and high temperature imprint characteristics of chalcogenide based RAM resistor elements , 2000 .

[11]  J. H. Coombs,et al.  Laser‐induced crystallization phenomena in GeTe‐based alloys. I. Characterization of nucleation and growth , 1995 .

[12]  D. Adler,et al.  Threshold Switching in Chalcogenide-Glass Thin Films , 1980 .

[13]  M. Chen,et al.  Compound materials for reversible, phase‐change optical data storage , 1986 .

[14]  Solis,et al.  Existence of electronic excitation enhanced crystallization in GeSb amorphous thin films upon ultrashort laser pulse irradiation. , 1996, Physical review letters.