论文信息 - Model of hot-carrier degradation for lateral IGBT device on SOI substrate

Model of hot-carrier degradation for lateral IGBT device on SOI substrate

A novel model for hot-carrier degradation in a lateral insulated gate bipolar transistor (IGBT) device on SOI substrate (SOI-LIGBT) is presented. The setup of the model is based on the existing hot-carrier degradation mechanism in a SOI-LIGBT and assisted by a lateral DMOS device on SOI substrate (SOI-LDMOS) with completely the same structure except for the doping type in the drain area. The model parameters have been extracted by the degradation measurement results and the validity of the proposed model in a SOI-LIGBT has been also verified.

Weifeng Sun | Qinsong Qian | Siyang Liu | Tingting Huang | Chunwei Zhang

[1] Weifeng Sun,et al. Comparisons of hot-carrier degradation behavior in SOI-LIGBT and SOI-LDMOS with different stress conditions , 2010 .

[2] Weifeng Sun,et al. Novel Hot-Carrier Degradation Mechanisms in the Lateral Insulated-Gate Bipolar Transistor on SOI Substrate , 2011, IEEE Transactions on Electron Devices.