Effects of Drift-Region Design on the Reliability of Integrated High-Voltage LDMOS Transistors
暂无分享,去创建一个
Yan-Kuin Su | Kuo-Ming Wu | J.F. Chen | Kuen-Shiuan Tian | Shiang-Yu Chen | C.M. Liu | S.L. Hsu | Y. Su | C.M. Liu | J.F. Chen | S. Hsu | Shiang-Yu Chen | Kuo-Ming Wu | Kuen-Shiuan Tian
[1] P. Moens,et al. Competing hot carrier degradation mechanisms in lateral n-type DMOS transistors , 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..
[2] S. K. Lee,et al. Optimization of safe-operating-area using two peaks of body-current in submicron LDMOS transistors , 2001, Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).
[3] J. Gong,et al. Time-Dependent Drain- and Source-Series Resistance of High-Voltage Lateral Diffused Metal–Oxide–Semiconductor Field-Effect Transistors during Hot-Carrier Stress , 2003 .
[4] Y. Su,et al. Hot-carrier reliability in submicrometer 40V LDMOS transistors with thick gate oxide , 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..
[5] A. W. Ludikhuize,et al. Analysis of hot-carrier-induced degradation and snapback in submicron 50 V lateral MOS transistors , 1997, Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's.
[6] V. O'Donovan,et al. Hot carrier reliability of lateral DMOS transistors , 2000, 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059).
[7] P.L. Hower,et al. Short and long-term safe operating area considerations in LDMOS transistors , 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..
[8] Claudio Contiero,et al. Hot-electron-induced degradation in high-voltage submicron DMOS transistors , 1996, 8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings.
[9] G. Krieger,et al. Moderately doped NMOS (M-LDD)-hot electron and current drive optimization , 1991 .
[10] Tahui Wang,et al. Investigation of Hot Carrier Degradation Modes in LDMOS by using a Novel Three-Region Charge Pumping Technique , 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.
[11] B. Riccò,et al. Hot-carrier reliability in submicrometer LDMOS transistors , 1997, International Electron Devices Meeting. IEDM Technical Digest.
[12] R. Degraeve,et al. Hot hole degradation effects in lateral nDMOS transistors , 2004, IEEE Transactions on Electron Devices.
[13] Prasad Chaparala,et al. Hot carrier reliability of N-LDMOS transistor arrays for power BiCMOS applications , 2002, 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).
[14] R. Degraeve,et al. A novel hot-hole injection degradation model for lateral nDMOS transistors , 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
[15] K. Ng,et al. Hot-carrier induced electron mobility and series resistance degradation in LDD NMOSFET's , 1994, IEEE Electron Device Letters.