SiGeSn material for integrated optical devices
暂无分享,去创建一个
Jörg Schulze | Michael Oehme | D. Schwarz | C. J. Clausen | I. A. Fischer | M. Oehme | I. Fischer | D. Schwarz | C. Clausen | J. Schulze
[1] Jörg Schulze,et al. GeSn-on-Si normal incidence photodetectors with bandwidths more than 40 GHz. , 2014, Optics express.
[2] G. Capellini,et al. Compositional dependence of the band-gap of Ge1−x−ySixSny alloys , 2016 .
[3] J. Bowers,et al. Ultra-low loss Si3N4 waveguides with low nonlinearity and high power handling capability. , 2010, Optics express.
[4] M. Oehme,et al. Germanium waveguide photodetectors integrated on silicon with MBE , 2008 .
[5] A. Larsen,et al. Relaxation of strained, epitaxial Si1−xSnx , 1998 .
[6] Jörg Schulze,et al. Electroluminescence of GeSn/Ge MQW LEDs on Si substrate. , 2015, Optics letters.
[8] M. Watts,et al. Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current. , 2011, Optics express.
[9] Shu-Wei Chang,et al. Strain-Balanced ${\rm Ge}_{z}{\rm Sn}_{1-z}\hbox{--}{\rm Si}_{x}{\rm Ge}_{y}{\rm Sn}_{1-x-y}$ Multiple-Quantum-Well Lasers , 2010, IEEE Journal of Quantum Electronics.
[10] Misfit dislocation injection, interfacial stability and photonic properties of Si-Ge strained layers , 1995 .
[11] Gregor Mussler,et al. GeSn Heterojunction LEDs on Si Substrates , 2014, IEEE Photonics Technology Letters.
[12] M. Vasilevskiy,et al. Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy , 2015 .
[13] Matthias Bauer,et al. Relaxed SiGe buffers with thicknesses below 0.1 μm , 2000 .
[14] Jurgen Michel,et al. Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates , 1991 .
[15] Erich Kasper,et al. Electrically pumped lasing from Ge Fabry-Perot resonators on Si. , 2015, Optics express.
[16] R. Soref,et al. Design of a Si-based lattice-matched room-temperature GeSn/GeSiSn multi-quantum-well mid-infrared laser diode. , 2010, Optics express.
[17] M. Hohnisch,et al. Relaxation of compositionally graded Si1 − xGex buffers: a TEM study , 1995 .
[18] G. Capellini,et al. Growth and characterization of SiGeSn quantum well photodiodes. , 2015, Optics Express.
[19] C. D. Thurmond,et al. Germanium Solidus Curves , 1956 .
[20] LeGoues,et al. Anomalous strain relaxation in SiGe thin films and superlattices. , 1991, Physical review letters.
[21] M. Oehme,et al. GeSn/Ge multiquantum well photodetectors on Si substrates. , 2014, Optics letters.
[22] Liying Jiang,et al. Synthesis and optical properties of Sn-rich Ge1 – x – ySixSny materials and devices , 2014 .
[23] L. Clavelier,et al. Epitaxial growth of Ge thick layers on nominal and 6° off Si(0 0 1); Ge surface passivation by Si , 2009 .
[24] Molecular beam epitaxy grown Ge/Si pin layer sequence for photonic devices , 2012 .
[25] M. Romagnoli,et al. An electrically pumped germanium laser. , 2012, Optics express.
[26] N. Taoka,et al. Epitaxial growth and crystalline properties of Ge1−x−ySixSny on Ge(0 0 1) substrates , 2015 .
[27] J. Faist,et al. Lasing in direct-bandgap GeSn alloy grown on Si , 2015, Nature Photonics.
[28] M. Oehme,et al. New virtual substrate concept for vertical MOS transistors , 1998 .
[29] R. Soref. Silicon Photonics: A Review of Recent Literature , 2010 .
[30] S. Iyer,et al. Molecular beam epitaxy of metastable, diamond structure SnxGe1−x alloys , 1989 .
[31] M. Oehme,et al. Relaxed SiGe buffer-layer growth with point defect injection , 2000 .
[32] Jörg Schulze,et al. Franz-Keldysh effect in GeSn pin photodetectors , 2014 .
[33] O. Pchelyakov,et al. Reflection high energy electron diffraction studies on SixSnyGe1 − x − y on Si(100) molecular beam epitaxial growth , 2014 .