论文信息 - Fabrication of sol-gel-derived zinc oxide thin-film transistor

Fabrication of sol-gel-derived zinc oxide thin-film transistor

In this paper, a zinc oxide (ZnO) thin-film transistor (TFT) has been developed by using the sol-gel method with spin coating. Solution-processed thin-film deposition method is used to overcome the drawback of other vacuum deposition techniques in which process needs high temperature coating and expensive equipment. In order to analyze the characteristics of ZnO film, atomic force microscopy (AFM) is used to investigate the roughness of ZnO film. The experimental results show that the thickness of ZnO film is ranging from 5 nm to 10 nm with mean roughness 0.683 nm. The I–V characteristic of ZnO thin film transistor shows high current on-to-off ratio up to 106.

Shao-Hui Shieh | Hsin-Chiang You | Chyi-Yau Shao

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