An improved nonlinear empirical model applied to RF SOI LDMOSFET

This paper introduced a RF SOI LOMOS nonlinear empirical model and the method of its parameters extraction. We realized the whole model by coding it with Verilog-A language and validated the model with a SOI LDMOS device, which cell has 20 fingers with a 1 mum gate length and a total gate width of 1 mm. The parameters are extracted by an analytical methods combining with some optimization steps. At last, we show that the DC functions and their derivatives are continuous and accurate in the sub-threshokL linear and saturate regions; capacitance functions show good representation to the CV curve in multi-bias conditions; the good results of wide-band S parameter and power characteristics demonstrated the excellent accuracy of the model..

[1]  Yoji Ohashi,et al.  An approach to determining an equivalent circuit for HEMTs , 1995 .

[2]  O. Tornblad.  An electrothermal BSIM3 model for large-signal operation of RF power LDMOS devices , 2002 .

[3]  Hyungcheol Shin,et al.  A simple and accurate method for extracting substrate resistance of RF MOSFETs , 2002, IEEE Electron Device Letters.

[4]  G. Dambrine,et al.  A new method for determining the FET small-signal equivalent circuit , 1988 .

[5]  D. G. Haigh,et al.  ISSUES IN NONLINEAR CIRCUIT THEORY AND APPLICATION TO HIGH FREQUENCY LINEAR AMPLIFIER DESIGN , 2001 .

[6]  G. Kompa,et al.  A new small-signal modeling approach applied to GaN devices , 2005, IEEE Transactions on Microwave Theory and Techniques.

[7]  J.A. del Alamo,et al.  RF power performance of an LDMOSFET on high-resistivity SOI , 2005, IEEE Electron Device Letters.

[8]  I. Omura,et al.  Prospects of high voltage power ICs on thin SOI , 1992, 1992 International Technical Digest on Electron Devices Meeting.

[9]  C. Blair,et al.  An electrothermal BSIM3 model for large-signal operation of RF power LDMOS devices , 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

[10]  Jaehyok Yi,et al.  Accurate RF large-signal model of LDMOSFETs including self-heating effect , 2001 .

[11]  G. Kompa,et al.  Highly consistent FET model parameter extraction based on broadband S-parameter measurements , 1992, 1992 IEEE Microwave Symposium Digest MTT-S.

[12]  J. P. Eggermont,et al.  Fully-Depleted SOI CMOS Technology for Low-Voltage Low-Power Mixed Digital/Analog/Microwave Circuits , 1999 .

[13]  Christian Fager,et al.  Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model , 2002 .

[14]  Anthony E. Parker,et al.  A realistic large-signal MESFET model for SPICE , 1996, IMS 1996.