Wideband ultra-low noise cryogenic InP IF amplifiers for the Herschel mission radiometers

The sub-millimeter radiometers of the Herschel mission have very stringent requirements. The scientific goals require an instantaneous bandwidth of four GHz with very low noise, flat gain and low power dissipation. Short-term gain stability of the amplifier is important, because gain fluctuations could limit the sensitivity of the instrument. Besides, a highly reliable, low weight unit is required to be compatible with the space instrumentation standards. The amplifiers will be used in conjunction with HEB and SIS mixers in all 7 channels of the instrument. This paper describes the design, the special construction techniques and the results of the amplifiers built by Centro Astronómico de Yebes for the development model of the Herschel Heterodyne Instrument. The average noise temperature obtained in the 4-8 GHz band is 3.5 K, with a gain of 27 ±1.1 dB at an ambient temperature of 15 K and keeping the total power dissipation below the allowed 4 mW. Normalized gain fluctuations were carefully measured, being lower than 1.5·10-4 Hz-1/2 @ 1 Hz. Space qualification of the design is in progress.

[1]  Nicholas D. Whyborn A Heterodyne Instrument for FIRST: HIFI , 1996 .

[2]  H. Fukui,et al.  Determination of the basic device parameters of a GaAs MESFET , 1979, The Bell System Technical Journal.

[3]  James B. Breckinridge,et al.  UV, Optical, and IR Space Telescopes and Instruments , 2000 .

[4]  John B. Shoven,et al.  I , Edinburgh Medical and Surgical Journal.

[5]  E.J. Wollack,et al.  Characteristics of broadband InP millimeter-wave amplifiers for radiometry , 1998, 1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192).

[6]  M. W. Pospieszalski,et al.  Cryogenically-cooled, HFET amplifiers and receivers: state-of-the-art and future trends , 1992, 1992 IEEE Microwave Symposium Digest MTT-S.

[7]  Juan Daniel Gallego,et al.  MEASUREMENTS OF GAIN FLUCTUATIONS IN GaAs AND InP CRYOGENIC HEMT AMPLIFIERS , 2000 .

[8]  N. C. Jarosik Measurements of the low-frequency-gain fluctuations of a 30-GHz high-electron-mobility-transistor cryogenic amplifier , 1996 .

[9]  I. Lopez-Fernandez,et al.  Low-noise cryogenic X-band amplifier using wet-etched hydrogen passivated InP HEMT devices , 1999, IEEE Microwave and Guided Wave Letters.

[10]  Victor Belitsky,et al.  LOW NOISE CRYOGENIC IF AMPLIFIERS FOR SUPER HETERODYNE RADIOASTRONOMY RECEIVERS , 2002 .

[11]  Goutam Chattopadhyay,et al.  Noise Stability of SIS Receivers , 2000 .

[12]  M. Pospieszalski Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence , 1989 .

[13]  Nick D. Whyborn,et al.  IF amplifier stability for the heterodyne instrument for FIRST (HIFI) , 2000, Astronomical Telescopes + Instrumentation.

[14]  M. W. Pospieszalski,et al.  Very low noise and low power operation of cryogenic AlInAs/GaInAs/InP HFET's , 1994, 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).