论文信息 - Comparison of O2 and H2O as oxygen source for homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy - 字舞流文

Comparison of O2 and H2O as oxygen source for homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy

S. Yamakoshi | Y. Kumagai | B. Monemar | M. Higashiwaki | A. Kuramata | K. Goto | H. Murakami | R. Togashi | K. Konishi