论文信息 - Hot‐carrier thermalization induced self‐phase modulation in semiconductor traveling wave amplifiers

Hot‐carrier thermalization induced self‐phase modulation in semiconductor traveling wave amplifiers

Pulsewidth dependent self‐phase modulation due to ultrafast (∼1 ps) hot‐carrier thermalization is observed for the first time in semiconductor traveling wave amplifiers. The information obtained from this study may play an important role in applications where simultaneous temporal and spectral characteristics of optical pulses is required.

[1] Gadi Eisenstein,et al. Femtosecond gain dynamics in InGaAsP optical amplifiers , 1990 .

[2] Erich P. Ippen,et al. Subpicosecond gain dynamics in GaAlAs laser diodes , 1987 .

[3] D. Newman,et al. Physics of Semiconductor Laser Devices , 1980 .

[4] N. Olsson,et al. Self-phase modulation and spectral broadening of optical pulses in semiconductor laser amplifiers , 1989 .

[5] John C. Connolly,et al. High peak power picosecond pulse generation from AlGaAs external cavity mode‐locked semiconductor laser and traveling‐wave amplifier , 1990 .

[6] Gerard A. Alphonse,et al. High-power superluminescent diodes , 1987 .

[7] C. H. Lee,et al. Generation of subpicosecond high-power optical pulses from a hybrid mode-locked semiconductor laser. , 1990, Optics letters.

[8] N. A. Olsson,et al. Spectral shift and distortion due to self‐phase modulation of picosecond pulses in 1.5 μm optical amplifiers , 1989 .

[9] Yaochun Shen. Principles of nonlinear optics , 1984 .

[10] R. Alfano,et al. Self-, cross-, and induced-phase modulations of ultrashort laser pulse propagation , 1988 .